The preparation of the single-phase perovskite conductive LaNiO_3 films on different substrates

摘要

LaNiO_3 thin films were deposited on Si (100) and Pt(111)/Ti/SiO_2/Si substrates by a modified metalorganic decomposition technique and rapid thermal annealing method. The structures of the films were characterized by x-ray diffraction (XRD). XRD analysis show that the LaNiO_3 thin films on Si (100) and Pt(111)/Ti/SiO_2/Si substrates possess single-phase perovskite-type structure and highly (100)-oriented. Scanning electron microscope (SEM) and atom force microscopy (AFM) image show the LaNiO_3 films with uniform and crack-free surfaces. The resisitivity vs. temperature and thickness curves of the LaNiO_3 films showed that the films possessed good metallic character.