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Three-Dimensional Monte Carlo Simulation of Primary Recrystallization and Grain Growth in Metals with Texture

机译:带纹理的金属初次再结晶和晶粒长大的三维蒙特卡洛模拟

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In the present paper the the Monte Carlo (MC) method is applied for the simulation of primary recrystallization and grain growth in metallic materials. Both processes are influenced by the distribution of the crystallographic orientations in the material. In the case of strong textures, most of the grain boundaries have a low misorientation. Such low angle boundaries are generally assumed to have a mobility much lower than the mobility of high angle boundaries. In the present MC-model, these anisotropic mobilities are realised by introducing modified flip rates. The three-dimensional simulations show the strong influence of the initial texture and of the mobilities on the growth kinetics as well as on the evolution of the texture. It is demonstrated that deviations from the parabolic time law of grain growth and texture alterations, both observed experimentally, can be simulated in a quite satisfying manner.rnFurthermore, the application of the method to model primary recrystallization is discussed. It turns out that the growth of the nuclei influenced by the local surrounding (grain boundaries, misorientation, defect density) can be simulated very well by the MC-model.
机译:在本文中,蒙特卡洛(MC)方法用于模拟金属材料中的初次再结晶和晶粒长大。两种方法都受材料中晶体取向分布的影响。在强纹理的情况下,大多数晶粒边界的取向差较低。通常假定这种低角度边界的迁移率远低于高角度边界的迁移率。在当前的MC模型中,这些各向异性迁移率是通过引入修改的翻转速率来实现的。三维模拟显示了初始纹理和迁移率对生长动力学以及纹理演变的强烈影响。结果表明,通过实验观察到的与抛物线时间定律的偏差和晶粒长大的变化,都可以以令人满意的方式进行模拟。此外,还讨论了该方法在初次再结晶建模中的应用。事实证明,MC模型可以很好地模拟受局部周围环境(晶粒边界,取向错误,缺陷密度)影响的原子核生长。

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