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Low-Temperature Synthesis and Gas Sensing Properties of Anatase TiO_2 Thin Films

机译:锐钛矿型TiO_2薄膜的低温合成及其气敏特性。

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摘要

Crystalline anatase TiO_2 thin films were obtained on glass substrates at 60℃, 75℃ and 90℃, respectively, by liquid phase deposition (LPD) method without subsequent heat treatment. X-ray diffraction (XRD), atomic force microscopy (AFM) and UV-Vis spectrophotometer were used to characterize the as-synthesized TiO_2 thin films. The H_2 sensing properties of the TiO_2 thin films based sensors were investigated. The results show that the gas sensors signal Ra/Rg (Ra: resistance in air, Rg: resistance in a sample gas) decreases with the increasing deposition temperature. The TiO_2 thin films obtained at deposition temperature of 60℃ exhibited the maximum H_2 gas response at 350℃, and the magnitude of the sensor signal and the response time for 500ppm H_2 was 1.25 and 17s, respectively.
机译:通过液相沉积(LPD)方法分别在60℃,75℃和90℃的玻璃基板上分别获得晶型为锐钛矿型的TiO_2薄膜,无需进行后续的热处理。利用X射线衍射(XRD),原子力显微镜(AFM)和紫外可见分光光度计对合成后的TiO_2薄膜进行表征。研究了基于TiO_2薄膜的传感器的H_2传感特性。结果表明,气体传感器信号Ra / Rg(Ra:空气中的电阻,Rg:样品气体中的电阻)随沉积温度的升高而降低。沉积温度为60℃的TiO_2薄膜在350℃时表现出最大的H_2气体响应,500ppm H_2的传感器信号强度和响应时间分别为1.25和17s。

著录项

  • 来源
  • 会议地点 Changsha(CN);Changsha(CN)
  • 作者单位

    Advanced Materials Laboratory, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China;

    Advanced Materials Laboratory, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China;

    Advanced Materials Laboratory, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China;

    Advanced Materials Laboratory, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China;

    Advanced Materials Laboratory, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料一般性问题;
  • 关键词

    TiO_2; thin films; synthesis; gas sensors;

    机译:TiO_2;薄膜;合成;气体传感器;

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