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Fast Terahertz Optoelectronic Amplitude Modulator Based on Plasmonic Metamaterial Antenna Arrays and Graphene

机译:基于等离子超材料天线阵列和石墨烯的快速太赫兹光电幅度调制器

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摘要

The growing interest in terahertz (THz) technologies in recent years has seen a wide range of demonstrated applications, spanning from security screening, non-destructive testing, gas sensing, to biomedical imaging and communication. Communication with THz radiation offers the advantage of much higher bandwidths than currently available, in an unallocated spectrum. For this to be realized, optoelectronic components capable of manipulating THz radiation at high speeds and high signal-to-noise ratios must be developed. In this work we demonstrate a room temperature frequency dependent optoelectronic amplitude modulator working at around 2 THz, which incorporates graphene as the tuning medium. The architecture of the modulator is an array of plasmonic dipole antennas surrounded by graphene. By electrostatically doping the graphene via a back gate electrode, the reflection characteristics of the modulator are modified. The modulator is electrically characterized to determine the graphene conductivity and optically characterization, by THz time-domain spectroscopy and a single-mode 2 THz quantum cascade laser, to determine the optical modulation depth and cut-off frequency. A maximum optical modulation depth of ~ 30% is estimated and is found to be most (least) sensitive when the electrical modulation is centered at the point of maximum (minimum) differential resistivity of the graphene. A 3 dB cut-off frequency > 5 MHz, limited only by the area of graphene on the device, is reported. The results agree well with theoretical calculations and numerical simulations, and demonstrate the first steps towards ultra-fast, graphene based THz optoelectronic devices.
机译:近年来,人们对太赫兹(THz)技术的兴趣日益增长,已经证明了其广泛的应用范围,从安全检查,无损检测,气体传感到生物医学成像和通信。在未分配的频谱中,与太赫兹辐射的通信具有比当前可用带宽高得多的带宽的优势。为了实现这一点,必须开发能够高速和高信噪比控制THz辐射的光电组件。在这项工作中,我们演示了一个室温频率相关的光电幅度调制器,其工作频率约为2 THz,其中结合了石墨烯作为调谐介质。调制器的体系结构是被石墨烯包围的等离子体偶极天线阵列。通过经由背栅电极对石墨烯进行静电掺杂,可以调制调制器的反射特性。通过THz时域光谱和单模2 THz量子级联激光器对调制器进行电学表征,以确定石墨烯的电导率并进行光学表征,从而确定光调制深度和截止频率。估计最大光学调制深度约为30%,并且当电调制的中心位于石墨烯的最大(最小)差分电阻率点时,最大(最小)敏感度。据报道,3 dB截止频率> 5 MHz,仅受器件上石墨烯面积的限制。结果与理论计算和数值模拟非常吻合,并证明了迈向超快速,基于石墨烯的太赫兹光电器件的第一步。

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  • 会议地点 San Francisco CA(US)
  • 作者单位

    Department of Semiconductor Physics, University of Cambridge, Cavendish Laboratory, J. J.Thomson Avenue, Cambridge, CB3 0HE, United Kingdom;

    Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, United Kingdom;

    Department of Semiconductor Physics, University of Cambridge, Cavendish Laboratory, J. J.Thomson Avenue, Cambridge, CB3 0HE, United Kingdom;

    Department of Semiconductor Physics, University of Cambridge, Cavendish Laboratory, J. J.Thomson Avenue, Cambridge, CB3 0HE, United Kingdom;

    Department of Engineering, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge,CB3 0FA, United Kingdom;

    Department of Engineering, Lancaster University, Lancaster, LA1 4YW, United Kingdom;

    Department of Semiconductor Physics, University of Cambridge, Cavendish Laboratory, J. J.Thomson Avenue, Cambridge, CB3 0HE, United Kingdom;

    Department of Semiconductor Physics, University of Cambridge, Cavendish Laboratory, J. J.Thomson Avenue, Cambridge, CB3 0HE, United Kingdom;

    Department of Semiconductor Physics, University of Cambridge, Cavendish Laboratory, J. J.Thomson Avenue, Cambridge, CB3 0HE, United Kingdom;

    Department of Engineering, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge,CB3 0FA, United Kingdom;

    Department of Chemical Engineering and Biotechnology, University of Cambridge, Pembroke Street, Cambridge, CB2 3RA, United Kingdom;

    Department of Semiconductor Physics, University of Cambridge, Cavendish Laboratory, J. J.Thomson Avenue, Cambridge, CB3 0HE, United Kingdom;

    Department of Semiconductor Physics, University of Cambridge, Cavendish Laboratory, J. J.Thomson Avenue, Cambridge, CB3 0HE, United Kingdom;

    Department of Semiconductor Physics, University of Cambridge, Cavendish Laboratory, J. J.Thomson Avenue, Cambridge, CB3 0HE, United Kingdom;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Terahertz; Modulator; Metamaterial; Graphene; Optoelectronic;

    机译:太赫兹调制器;超材料石墨烯光电子;

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