Compact THz Imaging Detector

摘要

We describe preliminary design, modeling and test results for the development of a monolithic, high pixel density, THz band focal plane array (FPA) fabricated in a commercial CMOS process. Each pixel unit cell contains multiple individual THz band antennae that are coupled to independent amplifiers. The amplified signals are summed either coherently or incoherently to improve detection (SNR). The sensor is designed to operate at room temperature using passive or active illumination. In addition to the THz detector, a secondary array of Visible or SWIR context imaging pixels are interposed in the same area matrix. Multiple VIS/SWIR context pixels can be fabricated within the THz pixel unit cell. This provides simultaneous, registered context imagery and "Pan sharpening" MTF enhancement for the THz image. The compact THz imaging system maximizes the utility of a ～ 300 μm × 300 μm pixel area associated with the optical resolution spot size for a THz imaging system operating at a nominal ～ 1.0 THz spectral frequency. RF modeling is used to parameterize the antenna array design for optimal response at the THz frequencies of interest. The quarter-wave strip balanced bow-tie antennae are optimized based on the semiconductor fabrication technology thin-film characteristics and the CMOS detector input impedance. RF SPICE models enhanced for THz frequencies are used to evaluate the predicted CMOS detector performance and optimal unit cell design architecture. The models are validated through testing of existing CMOS ROICs with calibrated THz sources.