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Modeling electron transport coherence in one and two-well terahertz step well quantum cascade structures with diagonal optical transitions

机译:模拟具有斜向光学跃迁的一阱和二阱太赫兹阶跃阱量子级联结构中的电子传输相干

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A density matrix and tight binding model along with a Monte Carlo approach are used to model electron transport in one and two-well terahertz (THz) step well quantum cascade (QC) structures. Two new structures were analyzed, a multi-step one-well structure and a principally two-well structure. Both of these structures use a diagonal optical transition for improved upper to lower lasing state lifetime ratio and feature a step well injector to provide near unity injection efficiency due to the spatial separation of the wavefunctions. Fast intrawell electron-longitudinal optical (LO)-phonon scattering is used to depopulate the lower lasing state which does not require the use of resonant tunneling. Density matrix Monte Carlo simulations are used to analyze these structures in order to investigate these properties. In these simulations scattering mechanisms including LO-phonon, electron-electron, impurity, and interface roughness scattering are treated semiclassically, while also contributing to dephasing scattering. A phenomenological dephasing time is also included to investigate the influence of dephasing on the electron transport within these structures. Subband populations, electron temperatures, optical gain, and current density are extracted from the simulations. The analysis indicates that it is necessary to include incoherent transport dephasing in order to provide realistic estimates of the transport process because the transport is primarily dominated by transitions between weakly coupled states. In addition, this analysis shows these simplified step well structures are capable of yielding high optical gain ~ 80 cm-1 while at the same time expected to have relatively low threshold current densities |e|j ~ 380 A/cm2.
机译:密度矩阵和紧密结合模型以及蒙特卡洛方法用于对一阱和两阱太赫兹(THz)阶跃阱量子级联(QC)结构中的电子传输进行建模。分析了两种新结构,一种是多步单井结构,另一种是两井结构。这两种结构都使用对角光学跃迁,以提高上下激光状态的寿命比率,并具有阶跃阱注入器,由于波函数的空间分离,可以提供接近统一的注入效率。快速的井内电子-纵向光学(LO)-声子散射用于减少较低的激射状态,而无需使用共振隧穿。密度矩阵蒙特卡洛模拟用于分析这些结构,以研究这些特性。在这些仿真中,半经典地处理了包括LO声子,电子,杂质和界面粗糙度散射在内的散射机制,同时也有助于使相位消散。现象相移相时间也包括在内,以研究移相对这些结构中电子传输的影响。从仿真中提取子带总数,电子温度,光学增益和电流密度。分析表明,有必要包括非相干传输相移以提供对传输过程的实际估计,因为传输主要受弱耦合状态之间的转换支配。另外,该分析表明,这些简化的阶梯形井结构能够产生约80 cm-1的高光学增益,同时预期具有较低的阈值电流密度| e | j〜380 A / cm2。

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