Abstract: The role of integrated device/circuit simulation is critical to understanding the gigahertz-photonic operation of photomixing circuits containing metal-semiconductor-metal (MSM) devices. This work presents an efficient convolution- based time-domain approach to circuit simulation that incorporates an advanced numerical MSM device model. Complete millimeter-wave circuit simulation requires consideration of both the dynamic, high-frequency behavior of the electron and hole charge carriers in the large-signal device, and the frequency-dependent, distributed nature of the embedding circuit. The modeled device is an MBE-grown GaAs MSM photodetector with trench electrodes. Device and circuit performance is assessed by calculating the optical responsivity and bandwidth. Simulations with the device alone demonstrate the effects of a new current density boundary condition, as well as the effects of using low- growth- versus conventional-growth-temperature GaAs MSM's. Global simulations illustrate the effect that the embedding circuit has on bandwidth. Both types of simulations aid in the co-design of device and circuit, with applications to millimeter-wave generation in phased-array antennas and optoelectronic-based communication systems.16
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