Temperature influence on Hall effect sensors characteristics

摘要

Horizontal Hall microsensors, comprising a silicon substrate and four contacts, providing two supply inputs and two differential outputs, are designed and characterized. This paper presents the temperature influence on the residual offset and also on the voltage related sensitivities. The measured voltage related sensitivity is 152 mV/VT. The sensors are tested at 125°C, 85°C, 50°C, 25°C, 0°C, −20°C and −40°C. An offset compensation method is used in order to achieve residual offset in the micro scale (the highest achieved value offset is 6.97 μV).