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Time-resolved laser spectroscopy of nitride semiconductors

机译：氮化物半导体的时间分辨激光光谱

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摘要

We present time-resolved photoluminescence measurements of InGaN MQWs, films, and LEDs

机译：我们介绍了InGaN MQW，薄膜和LED的时间分辨光致发光测量

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《Symposiuml on Nitrides and Related Wide Band Gap Materials of the E-MRS 1998 Spring Conference, Strasbourg, France,16-19 June 1998》|1998年|p.147-149|共3页
会议地点 Strasbourg(FR)
作者
Frederick H.Long; Milan Pophristic; Chunong Tran; Robert F.Kalicek Jr.; Zhe Chuan Feng; Ian Ferguson;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
Gallium nitride; Indium nitride; Multiple quantum wells; Time-resolved spectroscopy; Light-emitting-diodes (LEDs);

机译：氮化镓氮化铟;多量子阱；时间分辨光谱发光二极管（LED）;

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