High Voltage Schottky Barrier Diodes on P-Type SiC using Metal-Overlap on a Thick Oxide Layer as Edge Termination

摘要

P-type 6H SiC Schottky barrier diodes with good rectifying characteristics upto breakdown voltage as high as 1000V have been successfully fabricated using metal-overlap over a thick oxide layer (approx 6000 A) as edge termination and Al as the barrier metal. The influence of the oxide layer edge termination in improving the reverse breakdown voltage as well as the forward current - voltage characteristics is presented. The terminated Schottky diodes indicate a factor of two higher breakdown voltage and 2-3 times larger forward current densities than those without edge termination. The specific series resistance of the unterminated diodes was approx 228 m OMEGA -cm~2, while that of the terminated diodes was approx 84 m OMEGA -cm~2.