Modification of thermoelectric properties using insertion techniques

摘要

In this work is presented the application insertion techniques for the modification of the performance of thermoelectric materials. The results indicate that in cases as in Bi_2Se_3 compounds where insertion of foreign species in the lattice is possible due to its particular crystal structure, the insertion technique could be proved a valuable easy to apply and cost effective, alternative to doping technique. The techniques can produce homogeneous materials with electronic and thermoelectric properties finely tuned.