Correlation of ingap(001) surface structure during growth and CuPt-B-type bulk ordering

摘要

The mechanism causing the CuPt_B-type ordering of InGaP grown lattice matched to GaAs was investigated by in-situ reflectance anisotropy spectroscopy (RAS/RDS). Experiments were performed during InGaP growth in metal-organic vapour phase epitaxy (MOVPE). From the experiments it can be concluded that bulk ordering only occurs when InGaP growth is performed under phosphorus-rich (2x1)-like surface conditions. Bulk ordering completely disappears under growth conditions which cause a less-phosphorus-rich (2x4)-like surface dimer configuration.