A~1BiC~Ⅵ Thin Films as NO Sensors

摘要

The paper reports experimental data on growth, morphology, NO sensitivity and electrophysical properties of A~1BiC~Ⅵ thin films obtained by means of simple vacuum technology. The investigated samples were condensed onto the glass substrates under deposition rate 0.1 -0.5 nm/s at T = 300 K and vacuum level P = 10~(-3) Pa. AFM investigations of the film surface before and after interaction with aggressive environment demonstrated sufficient sensitivity of the film relief to the aggressive component. Room-temperature electric field-induced characteristics were investigated for metal-semiconductor (MS) Cr/NaBiTe_2 structures.