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The Adhesion of Pad Particles on Wafer Surfaces during Cu CMP

机译:Cu CMP期间晶片表面上垫颗粒的附着力

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摘要

The adhesion force of pad and alumina were experimentally and theoretically investigated in slurry solutions of different pHs. The isoelectric point (IEP) of pad particles was measured to be around pH 3. The wafer surfaces showed negative zeta potentials in the investigated pH ranges with exception of FSG and Ta. Cu and Ta showed higher interaction forces than dielectric materials. The lowest adhesion force was measured between pad particle and wafer surfaces in a slurry solution of pH 11. The magnitude of adhesion force of pad particles was lower than alumina particles.
机译:在不同pH的浆料溶液中,通过实验和理论研究了垫和氧化铝的粘附力。测得垫颗粒的等电点(IEP)约为pH3。在研究的pH范围内,晶圆表面显示出负的Zeta电位,但FSG和Ta除外。 Cu和Ta显示出比介电材料更高的相互作用力。在pH为11的浆液中,在垫颗粒和晶片表面之间测得的最低粘附力。垫颗粒的粘附力的大小低于氧化铝颗粒。

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