Lateral Distribution of Electrons Trapped in Nitride Layers

摘要

The recent advent of nitride-based localized charge-trapping storage has raised much interest in the lateral characterization of the trapped charge distribution, which is fundamental in defining scalability and retention properties. A direct characterization technique based on amplitude-sweep charge-pumping measurements is exploited here to investigate the lateral distribution of trapped electrons along the channel length. Further, the technique is applied to monitor the charge redistribution in time at high temperature.