首页> 外文会议>Symposium on New Applications for Wide-Bandgap Semiconductors; 20030422-20030424; San Francisco,CA; US >FABRICATION AND CHARACTERIZATIONS OF ZnO AND ZnO:Mn NANOCRYSTALLINE THIN FILMS
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FABRICATION AND CHARACTERIZATIONS OF ZnO AND ZnO:Mn NANOCRYSTALLINE THIN FILMS

机译:ZnO和ZnO:Mn纳米晶薄膜的制备与表征

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This paper provides a brief summary of the structural and optical study of ZnO and ZnO:Mn materials fabricated from simple process: oxidation of ZnS and ZnS:Mn thin films grown by LP-MOCVD. Both structural analysis and optical characterization have confirmed the good quality ZnO material formation. XRD results suggest that the fabricated ZnO film is composed of ~30 nm ZnO nanocrystals with a hexagonal wurtzite structure. Raman spectra show a strong resonant multiphonon effect. In all cases, a UV emission is observed at ~ 380 nm. A green emission is also observed in the ZnO nanocrystalline film. On the other hand, it is demonstrated that the Mn doping in ZnS film can dramatically affect the luminescence properties of end products: nanocrystalline ZnO thin films. The photoluminescence spectra of the films with an optimized Mn doping concentration only showed the ultraviolet emission, while the green emission was fully quenched. It is argued that the presence of the Mn can effectively passivate the electron and hole trapping sites at the surface and interface of the ZnO nanocrystals.
机译:本文简要介绍了通过以下简单工艺制造的ZnO和ZnO:Mn材料的结构和光学研究:通过LP-MOCVD生长的ZnS和ZnS:Mn薄膜的氧化。结构分析和光学表征都证实了高质量的ZnO材料形成。 XRD结果表明,所制备的ZnO薄膜是由〜30 nm的具有六方纤锌矿结构的ZnO纳米晶体组成。拉曼光谱显示出强烈的共振多声子效应。在所有情况下,均在〜380 nm处观察到紫外线发射。在ZnO纳米晶体膜中也观察到绿色发射。另一方面,证明了ZnS膜中的Mn掺杂会极大地影响最终产品的发光性能:纳米晶态的ZnO薄膜。具有最佳Mn掺杂浓度的薄膜的光致发光光谱仅显示紫外线发射,而绿色发射被完全猝灭。有人认为,Mn的存在可以有效地钝化ZnO纳米晶体的表面和界面处的电子和空穴俘获位点。

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