首页> 外文会议>Symposium on Microphotonics-Materials, Physics and Applications held Nov 27-29, 2000, Boston, Massachusetts, U.S.A. >IR and UV Femtosecond Laser Micromachining of Si-on-SiO_2 for Photonic Bandgap Crystal Fabrication
【24h】

IR and UV Femtosecond Laser Micromachining of Si-on-SiO_2 for Photonic Bandgap Crystal Fabrication

机译:Si-on-SiO_2的红外和紫外飞秒激光微加工,用于光子带隙晶体的制备

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

Femtosecond laser pulses with 775nm and 387nm were used to machine Si-on-SiO_2 substrates for photonic bandgap crystals. With 387nm ultrashort UV pulses, we obtained holes as small as 160 nm, which is smaller than half of the laser wavelength with only conventional optics. Moreover, a pitch-size of 420 nm is also obtained in Si-on-SiO_2, which meets the spacing requirement for today's telecommunication frequency - 1550 nm. Ultrafast laser micromachining is fast and versatile so that it is a powerful tool for in-situ microstructure operations such as nanostructuring, repairing, and production industrial applications.
机译:飞秒激光脉冲使用775nm和387nm来加工用于光子带隙晶体的Si-on-SiO_2衬底。使用387nm的超短UV脉冲,我们获得了小至160nm的孔,该孔小于仅使用常规光学器件的激光波长的一半。此外,在SiO 2上的Si上也获得了420 nm的节距,可以满足当今电信频率的间距要求-1550 nm。超快激光微加工是快速且通用的,因此它是用于原位微结构操作(例如纳米结构,修复和生产工业应用)的强大工具。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号