首页> 外文会议>Symposium on II-VI Compound Semiconductor Photovoltaic Materials, Apr 16-20, 2001, San Francisco, California >Design, Actual Performance, and Electrical Stability of CISCuT-Based Quasi-Endless Solar Cell Tapes
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Design, Actual Performance, and Electrical Stability of CISCuT-Based Quasi-Endless Solar Cell Tapes

机译:基于CISCuT的准环形太阳能电池带的设计,实际性能和电稳定性

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摘要

Solar cells based on Cu-In-S-phase absorber layers on a quasi-endless copper tape were made in a series of consecutive roll-to-roll processes, for which a base line has recently been set up. The so called "as grown cell absorber", which consists of a stack of CuIn_5S_8 and CuInS_2 layers, is completed to a solar cell by a CuI buffer layer of about 70 nm thickness and a 1 μm thick ZnO-TCO window layer. The design of the whole cell including the phase constitution of the absorber layer and the actual standard electrical characteristics will be presented. Considering the first stability tests and the experimental possibilities of the base line, an outlook will be given concerning the ability and perspectives of using these cell tapes for module production.
机译:在一系列连续的卷对卷工艺中,制造了基于准环形铜带上的Cu-In-S相吸收层的太阳能电池,最近已为其建立了基线。由CuIn_5S_8和CuInS_2层的堆叠组成的所谓“生长的电池吸收器”通过厚度约为70 nm的CuI缓冲层和1μm厚的ZnO-TCO窗口层构成太阳能电池。将介绍整个电池的设计,包括吸收层的相组成和实际的标准电特性。考虑到最初的稳定性测试和基线的实验可能性,将对使用这些电池带进行模块生产的能力和前景给出展望。

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