Electronic Properties of Cu-In-S Solar Cells on Cu-Tape Substrate

摘要

Thin film solar cells obtained by the "CIS on copper tape" technique are investigated. This technique promises a high throughput capability, but the efficiency of the cells is still about 5% only. The model of the band structure of the absorber has been introduced into the model of the whole cell. Parameters of the model were determined experimentally by use of quantitative EBIC profiling, C-V doping profiling, Hall measurements, and AFM. The structure has been simulated using SCAPS-1D software. Results of the simulation show a good correlation to the measured I-V and DSR data of the cell. The benefits and drawbacks of the cell structure as well as factors limiting its efficiency are discussed.