Novel 'Photochemical deposition' and conventional 'Electrochemical deposition' of CdS and Hg_xCdi_(1-x)Te thin films and their characterization for solar cell device applications

摘要

Solar cell devices of the structures CdS/CdTe and CdS/HgCdTe, based on II-VI semiconductor thin films have been fabricated and analyzed. CdS thin films were deposited by the recently established novel deposition technique, namely, 'Photochemical deposition' and the Cd rich Hg_xCd_(1-x)Te films used for the device fabrication were deposited by the conventional "electrochemical deposition" technique. First solar cell devices of the structures CdS/CdTe and CdS/HgCdTe using photochemically deposited CdS films, were fabricated and analyzed for the conversion efficiency.