Epitaxial growth of atomically flat spin dependent tunneling junctions

摘要

Spin dependent tunneling junctions with epitaxialy grown underlayers have been investigated to examine the possibility of achieving very flat and uniform barrier layers. Pt /Ni_(80)Fe_(20)/ Fe_(50)Mn_(50)/Ni_(80)Fe_(20) layers were deposited on sapphire (0001) substrates at different temperatures and monitored by in-situ reflection high energy electron diffraction (RHEED). The surface morphology has been found to depend strongly on the growth temperature. X-ray diffraction and magnetic hysteresis loop measurements were also performed to characterize the film structures.