Dislocation-induced surface strain on (001) silicon-on-insulator

摘要

We demonstrate a novel technique, based on low-energy electron microscopy, by which inhomogeneous uniaxial strain at the (001) surface of Si can be mapped quantitatively. Using this technique on silicon-on-insulator wafers, we determine the surface strain field induced by a single 60 deg dislocation and show that such extended defects can be used as monitors of heteroepitaxy-induced changes in the surface strain.