首页> 外文会议>Symposium on Engineered Porosity for Microphotonics and Plasmonics; 20031202-20031204; Boston,MA; US >Three-Dimensional Lithography for Rutile TiO_2 Single Crystals using Swift Heavy Ions
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Three-Dimensional Lithography for Rutile TiO_2 Single Crystals using Swift Heavy Ions

机译:快速重离子法制备金红石型TiO_2单晶的三维光刻

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We have developed a nano-micro structure fabrication method in rutile TiO_2 single crystal by use of swift heavy-ion irradiation. The area where ions heavier than Cl ion accelerated with MeV-order high energy were irradiated was well etched by hydrofluoric acid, by comparison etching was not observed in the pristine TiO_2 single crystal. Noticed that the irradiated area could be etched to a depth at which the electronic stopping power of the ion decayed to a value of 6.2keVm. We also found that the value of the electronic stopping power was increased, eventually decreased against depth in TiO_2 single crystal with, e.g. 84.5MeV Ca ion. Using such a beam, inside of TiO_2 single crystal was selectively etched with 20% hydrofluoric acid, while the top surface of TiO_2 single crystal subjected to irradiation was not etched. Roughness of the new surface created in the single crystal was within 7nm with the atomic forth microscopy measurement.
机译:利用快速重离子辐照,我们开发了一种金红石型TiO_2单晶的纳米微结构制备方法。用氢氟酸很好地蚀刻了被MeV级高能加速的比Cl离子重的离子的照射区域,相比之下,在原始的TiO_2单晶中未观察到蚀刻。注意,可以将被照射的区域蚀刻至离子的电子停止能力衰减至6.2keV / nm的值的深度。我们还发现,电子停止能力的值增加了,最终随着例如TiO 2单晶的深度而减小。 84.5MeV钙离子。使用这样的光束,用20%的氢氟酸选择性地蚀刻TiO 2单晶的内部,而没有蚀刻经过辐照的TiO 2单晶的顶表面。用原子第四显微镜测量,在单晶中产生的新表面的粗糙度在7nm之内。

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