PHOTOLUMINESCENCE OF Si/SiO_2, RE_2O_3/Si/SiO_2 AND RE_2O_3/Si/Al_2O_3 (RE = Er, Nd, Tm) SPUTTERED THIN FILMS

摘要

Si/SiO_2, RE_2O_3/Si/SiO_2 and RE_2O_3/Si/Al_2O_3 films were sputtered. Si/SiO_2 films were annealed to 1100℃ for 30 min in Ar. RE_2O_3/Si/SiO_2 films were annealed to 700℃, 1000℃, or 1100℃ for 30 min in Ar. RE_2O_3/Si/Al_2O_3 films were annealed to 700℃ for 30 min in Ar. Raman spectra and photoluminescence (PL) obtained for the Si/SiO_2 films show relation between Si nanocrystal (nc) presence, Si nanoparticle (np) PL and Si target area. Nd_2O_3 co-sputtered films presented PL for the (~4F_(5/2), ~2H_(9/2)) → ~4I_(9/2), ~4F_(3/2) → ~4I_(9/2), ~4F_(3/2) → ~4I_(11/2), and ~4F_(3/2) → ~4I_(13/2) transitions. Er_2O_3 co-sputtered films presented PL for the ~4I_(11/2) → ~4I_(15/2), and ~4I_(13/2) → ~4I_(15/2) transitions. Tm_2O_3 co-sputtered films presented PL for the ~3H_4 → ~3H_6 transition. Different spectral shapes were observed for the infrared (IR) PL of the Er~(3+) ions and of the Nd~4 ions for the RE_2O_3/Si/Al_2O_3 films with respect to the RE_2O_3/Si/SiO_2 films.