首页> 外文会议>Symposium on Advanced Optical Processing of Materials; 20030422-20030423; San Francisco,CA; US >Production of Ⅲ-Ⅴ Nanocrystals by Picosecond Pulsed Laser Ablation
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Production of Ⅲ-Ⅴ Nanocrystals by Picosecond Pulsed Laser Ablation

机译:皮秒脉冲激光烧蚀制备Ⅲ-Ⅴ纳米晶体

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摘要

InAs nanoparticles have been produced by picosecond pulsed laser ablation of bulk targets in the presence of an inert backing gas. Atomic force microscopy measurements show particles ranging in size from one to ten nm. Stoichiometry of the targets, determined by Rutherford backscattering measurements, are typically preserved within ten percent. Optical absorption and raman scattering data help confirm the crystalline, quantum confined nature of the nanoparticles.
机译:在惰性背衬气体存在下,通过皮秒脉冲激光烧蚀块状靶材可以生产InAs纳米颗粒。原子力显微镜测量显示,颗粒的大小范围为1到10 nm。通过卢瑟福反向散射测量确定的目标化学计量通常保持在百分之十以内。光学吸收和拉曼散射数据有助于确认纳米粒子的晶体,量子受限性质。

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