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Electrodeposition of Zn-Sb Thermoelectric Semiconductor Film in Ethylene Glycol Non-Aqueous Solution Containing Zn(II) and Sb(III)

机译:Zn-Sb热电半导体薄膜在含Zn(II)和Sb(III)的乙二醇非水溶液中的电沉积

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摘要

The electrodeposition of zinc-antimony thermoelectric semiconductor film was investigated in ethylene glycol (EG) solutions containing ZnCl_2 and SbCl_3 or antimony potassium tartrate (APT) at 393 K. In the electrodeposition using the EG-ZnCl_2-SbCl_3 baths, it was difficult to control the composition of the Zn-Sb films. In contrast, Zn-Sb alloy films containing 5-96 mol% Zn were obtained in the baths using APT as the antimony ion source. The composition of the electrodeposit could be controlled easily by the current density and the concentration of the bath. Zn-Sb (55.3-44.7 mol%Sb alloy film was obtained in the EG-ZnCl_2-APT (85.0-14.5-0.5 mol%) bath at the current density of 100 Am~(-2) at 393 K, and its Seebeck coefficient was 159 μV K~(-1).
机译:在含ZnCl_2和SbCl_3的乙二醇(EG)溶液或酒石酸锑钾(APT)中于393 K下对锌-锑热电半导体膜的电沉积进行了研究。在使用EG-ZnCl_2-SbCl_3浴进行电沉积时,很难控制Zn-Sb膜的组成。相反,在使用APT作为锑离子源的浴中获得了含有5-96mol%的Zn的Zn-Sb合金膜。电沉积物的组成可以容易地通过电流密度和浴液浓度来控制。在393K的电流密度为100 Am〜(-2)的EG-ZnCl_2-APT(85.0-14.5-0.5 mol%)浴中获得Zn-Sb(55.3-44.7 mol%Sb合金膜)系数为159μVK〜(-1)。

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  • 来源
    《Student posters-general》|2008年|191-201|共11页
  • 会议地点 Honolulu HI(US);Honolulu HI(US);Honolulu HI(US)
  • 作者单位

    Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, 671-2201 Japan;

    Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, 671-2201 Japan;

    Department of Materials Science and Chemistry, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, 671-2201 Japan;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 电化学、电解、磁化学;
  • 关键词

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