Investigation of Electrodeposited and Solution Grown ZnO nanorod based UV Photodetector

摘要

In this work solution growth technique as well as electrodepostion technique was employed to directly grow ZnO nanorod arrays on the p-GaN layer for fabricating n-ZnO nanorod/ p-GaN heterojunction diodes. Microstructure and room temperature photoluminescence (PL) measurement confirmed the growth of ZnO nanorod arrays with near perfect microstructure, stoichiometry and excellent optical quality. Current-voltage (Ⅰ-Ⅴ) measurements showed the formation of diode structure with a typical diode characteristic having a turn on voltage of 2.5V and 6.4V respectively, for solution grown and electrodeposited ZnO nanorod based p-n diode. A low resistive ITO coated glass was used to make contact with the top nanorod arrays and spectral response of the p-n diode was investigated. UV response particularly from solution grown ZnO nanorod based p-n diode was very promising.