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Superconducting Parent Compound Pr_2CuO_4 Achieved by Special Post-Reduction

机译:通过特殊后还原获得超导母体化合物Pr_2CuO_4

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摘要

It is commonly believed that the parent compounds of high-T_c cupratres are, universally, charge transfer insulators and triggered by Mott physics. In our experiments using metal-organic decomposition (MOD), however, accumulating evidences show that the parent compounds of "electron-doped" superconductors, RE_(2-x)Ce_xCuO_4 [RE = rare earth ion] with x = 0, are not Mott insulators but superconductors [1-5]. They have a T_c of 30 K and crystallize in the Nd_2CuO_4 (T) structure. Most likely, the sharp contradiction between our results and commonly achieved data originates from the complicated oxygen chemistry in these materials. The as-synthesized specimens contain a fair amount of impurity interstitial oxygen. Throughout the reduction process it is required to remove exclusively impurity oxygen while preserving regular oxygen site occupied in order to obtain superconductivity. With decreasing x the constraints of the reduction process are getting more tight. In this study, we systematically investigated the post-annealing process using MBE-grown T-P_2CuO_4 films. The MBE films were reduced ex-situ in a tubular furnace following a specially designed 2-step process, as in the case of MOD films. The films were annealed at T_a = 700 - 850℃ in a reducing atmosphere (P_(O2) = 2 × 10~(-5)- 2 × 10~(-3) atm) and finally reduced at a lower temperature T_(red) = 450 - 700℃ under vacuum (< 10~(-4) Torr). The film properties systematically changed with T_a, P_(O2), and T_(red). The optimized T_(red) varies from 475℃ to 650℃ mainly depending on T_a, since the microstructure and grain size of the films are determined by T_a. Optimal superconducting properties are T_c of 26 K, while ρ(300 K.) = 250 μΩcm, and RRR ~ 10. We believe the combination of thin-film synthesis and specially designed post-reduction process enabled us to obtain nearly intact CuO_2 planes. Samples prepared by above-mentioned method unveiled the intrinsic properties of the parent compounds, which are not triggered by Mott physics. This result also agrees with the recent calculation result indicating the parent compounds with T structure are not charge transfer insulators [6-8].
机译:通常认为,高T_c铜的母体化合物通常是电荷转移绝缘体,并由Mott物理引发。但是,在我们使用金属有机分解(MOD)的实验中,越来越多的证据表明,“电子掺杂”超导体的母体化合物RE_(2-x)Ce_xCuO_4 [RE =稀土离子] x = 0莫特绝缘子,但超导体[1-5]。它们的T_c为30 K,并在Nd_2CuO_4(T)结构中结晶。最有可能的是,我们的结果与通常获得的数据之间的尖锐矛盾源于这些材料中复杂的氧化学反应。合成后的样品包含大量的杂质间隙氧。在整个还原过程中,需要除去杂质氧,同时保留规则的氧位占据,以获得超导性。随着x的减少,减少过程的约束变得越来越严格。在这项研究中,我们系统地研究了MBE生长的T-P_2CuO_4薄膜的后退火过程。与MOD膜一样,MBE膜在经过特殊设计的两步法处理后,在管式炉中异位还原。薄膜在还原气氛(P_(O2)= 2×10〜(-5)-2×10〜(-3)atm)下于T_a = 700-850℃退火,最后在较低的温度T_(红色)= 450-700℃,真空下(<10〜(-4)Torr)。薄膜特性随着T_a,P_(O2)和T_(red)的变化而系统地改变。优化后的T_(red)在475℃至650℃之间变化,这主要取决于T_a,因为薄膜的微观结构和晶粒尺寸是由T_a决定的。最佳的超导特性是T_c为26 K,而ρ(300 K.)= 250μΩcm,RRR〜10。我们相信薄膜合成和特殊设计的后还原工艺的结合使我们能够获得几乎完整的CuO_2平面。通过上述方法制备的样品揭示了母体化合物的内在特性,这不是由莫特物理学引发的。这个结果也与最近的计算结果一致,表明具有T结构的母体化合物不是电荷转移绝缘子[6-8]。

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  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者单位

    NTT Basic Research Laboratories., NTT Corporation, Atsugi-shi, Kanagawa, 243-0198, Japan;

    Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei-shi,Tokyo, 184-8588, Japan;

    NTT Basic Research Laboratories., NTT Corporation, Atsugi-shi, Kanagawa, 243-0198, Japan;

    Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei-shi,Tokyo, 184-8588, Japan;

    NTT Basic Research Laboratories., NTT Corporation, Atsugi-shi, Kanagawa, 243-0198, Japan;

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  • 正文语种 eng
  • 中图分类 材料;
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