EVALUATION OF PEN STRUCTURES INCORPORATING SUPPORTED THICK FILM Ce_(0.9)Gd_(0.1)O_(1.95) ELECTROLYTES

摘要

Thick film (～10μm) CGO electrolytes have been deposited on porous anode substrates, and the PEN assembly completed by the addition of duplex LSCF cathodes. Incremental improvements to the processing procedures have produced PEN structures with improved performances but the area specific resistivity (ASR) values (～1.5 Ωcm~2 at 600℃) were higher than expected. Accordingly the associated power densities, using air and H_2/H_2O (97/3) supplies, were around 0.1 Wcm~(-2) at 600℃. Analysis of the I-V data suggests that the principal problem is associated with high ASR values for the thick film electrolytes which is attributed to the dissolution of water produced at the anode and a consequent reduction in the oxygen vacancy concentration.