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Photoelectrochemical and structural characterization of carbon-doped In_2O_3 and carbon-doped WO_3 films prepared via spray pyrolysis

机译:喷雾热解制备掺碳In_2O_3和掺碳WO_3薄膜的光电化学和结构表征

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摘要

Carbon-doped In_2O_3 and carbon-doped WO_3 films were produced using a spray pyrolysis methodology with octanoic acid as the carbon dopant source. C-doped and undoped In_2O_3 films showed a cubic polycrystalline In_2O_3 structure, and C-doped and undoped WO_3 films displayed a monoclinic polycrystalline WO_3 structure. C-doped In_2O_3 and WO_3, compared to their corresponding undoped materials, showed increased absorption in the 350-550 nm range with a red shift in the band gap transition. The presence of carbonate-type species in these C-doped samples was confirmed by XPS. The photoelectrochemical activity was evaluated under near UV-visible light and visible light only irradiation conditions. Under the same irradiation conditions, C-doped In_2O_3 and C-doped WO_3 electrodes produced greater photocurrent densities than their corresponding undoped electrodes. The C-doped In_2O_3 electrode exhibited photocurrent densities up to 1 mA/cm~2, with 40% from visible light irradiation, and the C-doped WO3 electrode showed photocurrent densities up to 1.3 mA/cm~2, with 50% from visible light irradiation. These results indicate the potential for further development of In_2O_3 and WO_3 photocatalysts by simple wet chemical methods, and provide useful information towards understanding the structure and enhanced photoelectrochemical properties of these materials.
机译:使用喷雾热解法,以辛酸为碳掺杂源,制备了碳掺杂的In_2O_3和碳掺杂的WO_3薄膜。 C掺杂和未掺杂的In_2O_3薄膜呈现立方多晶In_2O_3结构,C掺杂和未掺杂的WO_3薄膜呈现单斜晶多晶WO_3结构。与它们相应的未掺杂材料相比,掺C的In_2O_3和WO_3在350-550 nm范围内显示出增加的吸收,并且带隙跃迁发生红移。 XPS证实了这些C掺杂样品中存在碳酸盐类物质。在近紫外可见光和仅可见光照射条件下评价光电化学活性。在相同的辐照条件下,掺C的In_2O_3和掺C的WO_3电极产生的光电流密度要比相应的未掺杂电极大。掺C的In_2O_3电极的光电流密度高达1 mA / cm〜2,可见光照射占40%,掺C的WO3电极的光电流密度高达1.3 mA / cm〜2,可见光占50%。光照射。这些结果表明通过简单的湿化学方法进一步开发In_2O_3和WO_3光催化剂的潜力,并为了解这些材料的结构和增强的光电化学性能提供有用的信息。

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