High performance LWIR Type II InAs/GaSb superlattice photodetectors and infrared focal plane arrays

摘要

Dark current has become a significant limiting factor for the development of the Type II InAs/GaSbsuperlattices technology. Experimental results showed that at liquid nitrogen temperature the dominating dark currentunder reverse bias is the generation-recombination current before the tunneling current turns on. Recent research on thesource of the dark current indicated that the Auger recombinations might play a very important role in the superlatticediode dark current. With proper design of the superlattice structure, we have been able to reduce the dark current severalorders of magnitude in the LWIR range. The superlattice diode performance was also improved dramatically. Infraredfocal plane arrays based on these superlattices will also be discussed.