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REMOVAL OF AS(III) AND AS(V) IN AQUEOUS SOLUTION

机译:去除水中的AS(III)和AS(V)

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摘要

There are toxic arsenical species such as As(III) and As(V), and arsenious species have speciallyrnstrong toxicity. The strong toxicity causes contamination of groundwater and water pollution for thernsemiconductor production process. This study is concerned with the removal of As(III) and As(V)rnwith various kinds of Mg/Al layered double hydroxides (LDH) containing CO_3~(2-), SO_4~(2-), Cl~- and NO_3~- as interlayer anionic species.rnThe anion exchange property is different from the kind of layered double hydroxides and the Mg-rnAl-NO_3~-LDH is superior in the anion exchange property of As(III) and As(V) due to the nature ofrnnitrate ion existing in the interlayer. The pH condition suitable for As(V) removal is 7.1 or more. Ifrnthe initial conditions such as 10mg/dm~3 of As(V) concentration, 7.1 of pH, 1 m~3 of amount of solutionrnand 99 per cent of removal are fixed, the required amount of Mg-Al-NO_3~-LDH is 0.27kg for two stepbatchrnoperations. The As(III) is suitable to oxidize to As(V) before the removal processing.
机译:有砷(As)(III)和砷(V)等有毒砷类物质,砷类物质的毒性特别强。强烈的毒性会导致地下水污染和半导体生产过程中的水污染。这项研究涉及用含有CO_3〜(2-),SO_4〜(2-),Cl〜-和NO_3的各种Mg / Al层状双氢氧化物(LDH)去除As(III)和As(V)rn作为层间阴离子物质。阴离子交换性能不同于层状双氢氧化物,Mg-rnAl-NO_3〜-LDH的阴离子交换性能优于As(III)和As(V)。存在于中间层中的硝酸根离子的性质。适于除去As(V)的pH条件为7.1以上。如果确定了初始条件,例如As(V)浓度为10mg / dm〜3,pH为7.1,溶液量为1 m〜3,去除率为99%,则所需的Mg-Al-NO_3〜-LDH量为两次分批操作为0.27kg。在去除处理之前,As(III)适合氧化成As(V)。

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