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Low Voltage Single Crystal Actuators

机译:低压单晶执行器

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摘要

In this paper low voltage single crystal actuators were investigated using thin PMN-PT plates for applications requiring low voltage, large strain, low profile and/or actuation at cryogenic temperatures. Firstly, single crystal thickness effect on piezoelectric properties was studied by investigating the relationship between electromechanical coupling coefficient of PMN-PT crystals and the crystal thickness. It was found that electromechanical coupling coefficient (k_t) of 50 μm, 75 μm and 100 μm PMN-PT single crystal thin plates are 0.5, 0.51, and 055, respectively, which are slightly lower than that of bulk single crystal (0.6). A couple of single crystal actuators were then assembled using crystal plates with thickness of 150-200 μm. These actuators were characterized by measuring strain vs. electric field at room temperature and cryogenic temperatures. A 3 mm x 3 mm x 19 mm single crystal stack actuator showed a 21 μm stroke at room temperature under 150 V, and a 10 μm stroke at 60 K under 200 V. A 5 mm x 5 mm x 12 mm single crystal actuator showed 13.5 μm stroke at room temperature under 150 V, and 6 μm stroke at 77 K under 150 V. These low voltage actuators hold promising for space precise positioning and adaptive structures and cryogenic SEM, SPM and STM applications.
机译:在本文中,研究了使用薄PMN-PT板的低压单晶致动器,用于需要低压,大应变,低轮廓和/或在低温下致动的应用。首先,通过研究PMN-PT晶体的机电耦合系数与晶体厚度之间的关系,研究了单晶厚度对压电性能的影响。发现50μm,75μm和100μmPMN-PT单晶薄板的机电耦合系数(k_t)分别为0.5、0.51和055,略低于块状单晶(0.6)的机电耦合系数。然后使用厚度为150-200μm的晶体板组装几个单晶致动器。这些执行器的特点是在室温和低温下测量应变与电场的关系。一个3 mm x 3 mm x 19 mm单晶硅执行器在室温下在150 V下显示21μm的行程,在60 K在200 V下显示10μm的行程。在150 V下室温下的冲程为13.5μm,在150 V下77 K下的冲程为6μm。这些低压致动器在空间精确定位和自适应结构以及低温SEM,SPM和STM应用方面具有广阔的前景。

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