Generic Heterogeneously Integrated Ⅲ-Ⅴ Lasers-on-Chip with Metal-Coated Etched-Mirror

摘要

We demonstrate electrically-pumped Ⅲ-Ⅴ quantum-well lasers bonded on SiO_2 with a metal-coated etched-mirror. The metal-coated etched-mirror allow the lasers to be used as on-chip laser, but our process design make sure that it requires no additional fabrication step to fabricate the metal-coated etched mirror. The bonded Ⅲ-Ⅴ on SiO_2 also permits tight laser mode confinement in the active region due to high index contrast between Ⅲ-Ⅴ and SiO_2. Moreover, it promises a flexible choice of host substrate, in which the silicon substrate could also be replaced with other materials. The laser devices demonstrated have the lowest threshold of 50 mA, a maximum output power of 9 mW and a differential quantum efficiency of 27.6%.