首页> 外文会议>The Sixth International Display Workshops, Dec 1-3, 1999, Sendai, Japan >Influence of gas mixing ratio on the secondary electron emission coefficient (γ) of MgO single crystals with different orientation and MgO protective layer in surface discharge AC-PDPs
【24h】

Influence of gas mixing ratio on the secondary electron emission coefficient (γ) of MgO single crystals with different orientation and MgO protective layer in surface discharge AC-PDPs

机译:气体混合比对表面放电AC-PDP中取向不同的MgO单晶和MgO保护层的二次电子发射系数(γ)的影响

获取原文
获取原文并翻译 | 示例

摘要

The secondary electron emission coefficient γ of MgO single crystals and the difference of gas mixing ratio of Xe to Ne on secondary electron emission coefficient γ have been investigated by γ -focused ion beam system. It is found that the MgO single crystals of (111) crystallinity has the highest secondary electron emission coefficient γ from 0.09(0.03) up to 0.16(0.04), while from 0.07(0.02) to 0.15(0.03) for (200) and from 0.06(0.01) to 0.13(0.02) for (220) crystallinities for operating Ne(Xe) ions ranging from 50eV to 200eV throughout this experiment. And it is found that the secondary electron emission coefficient γ ranged from 0.03 up to 0.06 for Ne-Xe mixtures are much smaller than those of 0.09 up to 0.16 for pure Ne ions under accelerating voltage ranged from 50V to 200V.
机译:利用γ聚焦离子束系统研究了MgO单晶的二次电子发射系数γ和Xe与Ne的气体混合比对二次电子发射系数γ的影响。发现(111)结晶度的MgO单晶具有最高的二次电子发射系数γ,从0.09(0.03)到0.16(0.04),而(200)和从0.07(0.02)到0.15(0.03)在整个实验过程中,操作(Ne)离子的(220)结晶度为0.06(0.01)至0.13(0.02),范围为50eV至200eV。并且发现,在50V至200V的加速电压下,Ne-Xe混合物的二次电子发射系数γ范围从0.03到0.06,远小于纯Ne离子的0.09到0.16。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号