首页> 外文会议>The Sixth International Conference on the Science and Technology of Display Phosphors, Nov 6-8, 2000, San Diego, California >PHOTO- AND ELECTROLUMINESCENCE IN ZINC GERMANATE AND ZINC SILICATE POWDERS AND ACTFEL DEVICES
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PHOTO- AND ELECTROLUMINESCENCE IN ZINC GERMANATE AND ZINC SILICATE POWDERS AND ACTFEL DEVICES

机译:锗酸锌和硅酸锌粉末及丙烯酸酯装置的光和电致发光

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摘要

Manganese-doped zinc germanate and silicate powders exhibit bright green photoluminescence with excellent chromaticity, affording a variety of applications in displays and lighting. Typical preparative methods include high temperature solid-state reactions between the appropriate starting materials. These temperatures can exceed 1273 K. Likewise, thin-film methods require annealing of the as-deposited films at temperatures above 873 K. In this contribution, we describe a new, low-cost and easy way to make zinc germanate and zinc silicate powders and films at temperatures as low as 398 K. Zinc silicate has been prepared by both low- and high-temperature methods. Precipitation reactions can be carried out to form a hydroxylated species. Dehydration of this product in air at 473 K leads to the production of an amorphous product. If, however, the precipitate is placed in a Teflon-lined high-pressure reaction vessel at 473 K for a period of 12 h, a highly crystalline product is formed. Since as-deposited, sputtered films of zinc germanate are amorphous, high temperature anneals are generally required in order to produce a crystalline material. Depending on the method used, annealing temperatures of 873 to 1073 K are usually employed. The hydrothermal anneal described above can be used to produce a crystalline thin-film of zinc germanate at temperatures as low as 398 K.
机译:锰掺杂的锗酸锌和硅酸盐粉末显示出具有出色色度的亮绿色光致发光,可在显示器和照明中提供多种应用。典型的制备方法包括适当的原料之间的高温固态反应。这些温度可能超过1273K。同样,薄膜方法需要在873 K以上的温度下对沉积的薄膜进行退火。为此,我们描述了一种低成本,简便的新方法来制备锗酸锌和硅酸锌粉末并在低至398 K的温度下成膜。硅酸锌已通过低温和高温方法制备。可以进行沉淀反应以形成羟基化的物质。该产品在空气中以473 K脱水导致产生无定形产品。但是,如果将沉淀物在473 K的Teflon衬里高压反应容器中放置12 h,则会形成高度结晶的产物。由于沉积的溅射的锗酸锌薄膜是非晶态的,因此通常需要高温退火以生产结晶材料。根据所使用的方法,通常采用873至1073 K的退火温度。上述的水热退火可用于在低至398 K的温度下生产锗酸锌晶体薄膜。

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