Emitting 1530 nm light on Si with Optical Gain from Light Emitting Layer consisting of Er_2O_3, P_2O_5, Yb_2O_3 Nanoparticles and Spin-on Glass

摘要

Emitting 1530 nm light on Silicon wafer is very useful because 1530nm is an important band in optical fiber communication. We explore a new way of light emission at 1530 nm. We demonstrate a simple and non-expensive process to form light-emitting layer. It can be deposited on silicon wafers. The properties of samples can be varied through controlling the composition. The emission efficiency can be further improved by introducing P_2O_5 and Yb_2O_3 nanoparticles into the solution. This emitting layer is able to show the signals only within several millimeters due to surface effect of nanoparticles, enabling the higher concentration of Er~(3+). The optical gain at 1530nm is measured using variable stripe length method. The gain coefficient can be as large as 18 cm~(-1).