Arsenic diffusion in Si and Si_(0.9)Ge_(0.1) alloys: Effect of defect injection

摘要

Results of intrinsic As diffusion in Si as well as in strained and relaxed Si_(0.9)Ge_(0.1) layers are presented. Using Molecular Beam Epitaxy in-situ As doped epitaxial Si and compressively strained and relaxed Si-Ge layers were grown on Si substrates. The samples were annealed using Rapid Thermal Annealing (RTA) at 1000℃. Arsenic diffusion is seen to be enhanced in SiGe than in Si. The enhancement factor is calculated to be 2.3 and 1.3 for relaxed and strained Si_(0.9)Ge_(0.1), respectively. Also, using RTA in oxygen atmosphere, interstitial and vacancies were selectively injected in to the sample structures. Diffusion enhancement is also recorded in Si and Si-Ge structures with interstitial as well as vacancy injections over inert anneal. The results suggest that both interstitial and vacancy defects contribute to As diffusion in Si and Si_(0.9)Ge_(0.1).