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Superhyperfine interactions of the nitrogen donors in 4H SiC studied by pulsed ENDOR and TRIPLE ENDOR spectroscopy

机译:脉冲ENDOR和TRIPLE ENDOR光谱研究4H SiC中氮供体的超超精细相互作用。

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摘要

The nitrogen donors residing at quasi-cubic lattice site (Nk) in 4H SiC were investigated by field sweep electron spin echo (FS ESE), pulsed electron nuclear double resonance (ENDOR) and pulsed General TRIPLE ENDOR spectroscopy. The ~(29)Si and ~(13)C superhyperfine lines observed in the FS ESE and ENDOR spectra of N_k in n-type 6H SiC were assigned by pulsed General TRIPLE resonance spectroscopy to the specific carbon (C) and silicon (Si) atoms located in the nearest environment of N_k in 4H SiC. The superhyperfine interaction constants and their relative signs for N_k with ~(29)Si and ~(13)C nuclei located in the nearest-neighbor shells are found from the General TRIPLE ENDOR spectra to be positive for C atoms and negative for Si atoms.
机译:通过场扫描电子自旋回波(FS ESE),脉冲电子核双共振(ENDOR)和脉冲通用TRIPLE ENDOR光谱研究了4H SiC中准立方晶格位点(Nk)上的氮供体。在N型6H SiC的N_k的FS ESE和ENDOR光谱中观察到的〜(29)Si和〜(13)C超超细谱线通过脉冲通用TRIPLE共振光谱法分配给特定的碳(C)和硅(Si)原子位于4H SiC中N_k最近的环境中。从通用TRIPLE ENDOR光谱中发现,N_k与〜(29)Si和〜(13)C原子核位于最近邻居壳中的超超相互作用常数及其相对符号从C原子为正,Si原子为负。

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  • 来源
  • 会议地点 St. Petersburg(RU)
  • 作者单位

    Institute of Physics, AS CR, Na Slovance 2, 18221, Praha 8, Czech Republic,V.E. Lashkaryov Institute of semiconductor physics, NASU, pr. Nauky 45, 03028, Kiev, Ukraine;

    V.E. Lashkaryov Institute of semiconductor physics, NASU, pr. Nauky 45, 03028, Kiev, Ukraine;

    A.F. Ioffe Physical Technical Institute, RAS, Polytechnicheskaya 26, 194021 St. Petersburg, Russia;

    Institute of Experimental Physics Ⅱ, Leipzig University, D-04103, Linnestrasse 5, Leipzig, Germany;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Nitrogen donors; 4H SiC; ENDOR;

    机译:氮供体; 4H SiC;恩多;

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