Electron paramagnetic resonance study of the HE/4/S/5 center in 4H-SiC

摘要

We present new electron-paramagnetic-resonance (EPR) data on the HEI4/SI5 center in 4H-SiC. So far, the SI5 (SI-5) center has been observed only in as-grown SiC substrates; however, we found that it can be created by electron irradiation to commercial n-type 4H-SiC The artificially created SI5 center, which we had preliminary called HEM, was found to be identical with the SI5 center in as-grown SiC. A high-intensity HEI4/SI5 spectrum of irradiated SiC revealed clear hyperfine structures of ~(29)Si and ~(13)C, which enabled us to identify the origin of this center as a carbon antisite-vacancy pair in the negative charge state (C_(Si)-V_C~-). We assessed its electronic levels using photo-EPR.