Interpretation of Imaging Techniques of Photovoltaic Modules Assisted by Temperature Simulation

摘要

This paper intends to compare infrared (IR) images and simulated temperature distributions in order to characterize and analyse the quality of crystalline silicon photovoltaic (PV) modules and components. Defects in photovoltaic (PV) modules are detected by IR imaging as well as by electroluminescence (EL) measurements. Additionally, fundamental temperature simulations for selected module defects are performed exemplarily to get a more comprehensive understanding of module degradation and failures. Thus, a better identification and distinction of strong heat dissipating defects, like hot spots, and temperature distribution influencing defects, like cracks, are doable. For example, cracks can have different impact on the module quality depending on the surrounding.