Resistive switching characteristics of solution-processible TiOx using nano-scale via-hole structures

摘要

Recently, resistance random access memory (ReRAM) devices have been considered as one of the most promising candidates for next-generation non-volatile memory, due to their great scalability, low power consumption, and non-destructive readout. Especially, many reaserchers have widely investigated ReRAM devices for transparent, flexible, low-cost, and light-weight memory application, using solution-processible transparent and/or flexible metal oxides. However, up to date, most of solution-processed ReRAM devices have been fabricated and tested their feasibility in micron-scale. In the aspect of high-density memory as well as the confirmation of their intrinsic properties, the memory characteristics of solution-processed ReRAM devices should be confirmed in nano-scale regime. In this study, we successfully demonstrated ReRAM device with active area below 1 μm², using solution-processed TiOx in via-hole structures.