Organic field-effect transistor sensors with dual responses to dinitrotoluene

摘要

Recently, organic field-effect transistors (OFETs) have been studied in applications such as radio frequency identification (RFID) tags, display drivers, pressure mapping elements and sensors. Some OFETs are highly sensitive to various analytes and combined with their low-cost, low-weight and flexibility, OFETs are attractive candidates for sensors. OFETs have potential in applications such as homeland security, industrial and environmental monitoring, and biological detection, with various alternative methods currently being used [1–3]. In OFETs, analytes will alter the source-drain current by various mechanisms such as doping or quenching the transistor, or trapping/retarding charge transport via dipole-induced interactions. These different mechanisms alter the threshold voltage and/or mobility of the device, altering the source drain current. Tuning charge carrier energies of organic semiconductors is far easier than in conventional inorganic devices, allowing for greater freedom in designing more sensitive films. The film thickness can be as small as a few monolayers to allow for a faster response.