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Anodic Films Grown on Magnesium and Magnesium Alloys in Fluoride Solutions

机译:氟化物溶液中镁和镁合金上生长的阳极膜

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Formation behavior of anodic oxide films on magnesium in fluoride electrolytes was investigated with attention to the effects of anodizing voltage and aluminum content. In the range of voltage between 2V and 100V, porous film was formed in alkaline fluoride solution associated with high current density at around 5V and at breakdown voltage. The critical voltage of breakdown to allow maximum current flow was approximately 60V and relatively independent on substrate purity. The films formed at breakdown voltage showed a lava-like porous structure similar to those obtained on aluminum and other valve metals. Barrier films or semi-barrier films, which were composed of hydrated outer layer and relatively dense inner layer, were formed at the other voltages. In the case of AZ91D, the critical voltage increased to 70V and peculiar phenomenon at 5V was not observed, so that only barrier films were formed at less than the breakdown voltage. These phenomena can be explained by the effects of aluminum incorporation into the film to prevent dissolution and to promote passivation of magnesium. The depth profiles of constituent elements showed that aluminum distributed in whole depth of the film.
机译:研究了阳极氧化电压和铝含量的影响,研究了氟化物电解质中镁上阳极氧化膜的形成行为。在2V至100V的电压范围内,在碱性氟化物溶液中形成多孔膜,并伴随着大约5V的高电流密度和击穿电压。允许最大电流通过的击穿临界电压约为60V,并且与基板纯度无关。在击穿电压下形成的膜显示出类似于熔岩状的多孔结构,类似于在铝和其他阀金属上获得的结构。在其它电压下形成由水合外层和相对致密的内层组成的阻挡膜或半阻挡膜。在AZ91D的情况下,临界电压增加到70V,并且未观察到5V的特殊现象,因此仅在低于击穿电压的条件下形成了势垒膜。这些现象可以通过将铝掺入薄膜中以防止溶解并促进镁的钝化来解释。组成元素的深度曲线表明,铝分布在薄膜的整个深度。

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