RAPID THERMAL PROCESSING OF POROUS SILICON FOR THE STRUCTURE STABILIZATION

摘要

Rapid thermal processing (RTP) of porous silicon (PS) is discussed to stabilize the PS structure. 1μm thick PS layers were subjected to RTP with incoherent light pulses of second and millisecond durations. PS lattice parameters relative to the lattice parameters of a crystalline Si in the direction perpendicular to the wafer surface have been studied by X-ray double-crystal diffractometry. PS lattice is shown to be scarcely affected by light pulses of millisecond durations. At the same time RTP with light pulses from the second duration range was demonstrated to expand the PS lattice parameter considerably. PS lattice deformation should be taken into a ccount in deciding on RTP regimes for precessing of the structures containing PS layers.