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Design, Performance and Qualification of a Commercially Available MEMS Switch

机译:商用MEMS开关的设计,性能和鉴定

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This paper presents an overview of the design and construction of the TT712 SPDT RF MEMS Switch, the first ever qualified RF MEMS production switch. The design and construction of the TT712 Switch includes three significant innovations: a proprietary high force disk actuator, unique device on package construction, and an in-line hermetic chip scale package. An overview of parametric test data is also included. Typical switches have 100 million cycle lifetime, 70 μsec switching speed, better than 10 mΩ trace resistance repeatability; 0.1 dB insertion loss, 35 dB return loss, and 30 dB isolation (all at 1 GHz) and can switch up to 30 W of RF power. To qualify this device, Teravicta has adapted semiconductor industry best practices to develop an appropriate methodology for RF MEMS switch qualification. This paper will review this RF MEMS Switch qualification methodology in some detail, and Prototyping of such a simple structure is also deceptively simple - and countless designs have been fabricated in small quantities. Execution of a reliable design that is capable of achieving commercial levels of performance and reliability is considerably more difficult, however, as evidenced by the fact that by 2001 more than 50 organizations worldwide had invested thousands of man-years in an attempt to commercialize a MEMS switch without producing a marketable product. Even within the past few years, a number of companies have introduced prototype devices into the market, only to withdraw them in the present representative data that demonstrates the successful qualification of the TT712 SPDT switch. Progress of work with the SEMI Standards Organization (MEMS Standards Committee) to develop a generic industry standard for RF MEMS Switch qualification is also discussed.
机译:本文概述了首款合格的RF MEMS生产开关TT712 SPDT RF MEMS开关的设计和构造。 TT712交换机的设计和结构包括三项重大创新:专有的高压磁盘执行器,独特的封装结构设备以及在线气密芯片级封装。还包括参数测试数据的概述。典型开关的寿命为1亿次,开关速度为70微秒,优于10mΩ的迹线电阻可重复性; 0.1 dB的插入损耗,35 dB的回波损耗和30 dB的隔离度(均在1 GHz时),并且可以切换高达30 W的RF功率。为了使该器件合格,Teravicta采纳了半导体行业的最佳实践,为RF MEMS开关认证开发了合适​​的方法。本文将详细介绍这种RF MEMS开关认证方法,并且这种简单结构的原型设计也看似简单-并已大量制造了无数设计。然而,要执行能够实现商业水平的性能和可靠性的可靠设计要困难得多,这一事实证明,到2001年,全世界有50多个组织投入了数千人年的时间来尝试使MEMS商业化。切换而不生产适销对路的产品。即使在过去的几年中,许多公司也将原型设备引入了市场,只是将它们撤回了目前的代表性数据中,这些数据证明了TT712 SPDT开关的成功认证。还讨论了与SEMI标准组织(MEMS标准委员会)合作制定RF MEMS开关认证通用工业标准的工作进展。

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