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High linearity SPAD and TDC array for TCSPC and 3D ranging applications

机译:适用于TCSPC和3D测距应用的高线性度SPAD和TDC阵列

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摘要

An array of 32×32 Single-Photon Avalanche-Diodes (SPADs) and Time-to-Digital Converters (TDCs) has been fabricated in a 0.35 μm automotive-certified CMOS technology. The overall dimension of the chip is 9×9 mm~2. Each pixel is able to detect photons in the 300 nm - 900 nm wavelength range with a fill-factor of 3.14% and either to count them or to time stamp their arrival time. In photon-counting mode an in-pixel 6-bit counter provides photon-number-resolved intensity movies at 100 kfps, whereas in photon-timing mode the 10-bit in-pixel TDC provides time-resolved maps (Time-Correlated Single-Photon Counting measurements) or 3D depth-resolved (through direct time-of-flight technique) images and movies, with 312 ps resolution. The photodetector is a 30 μm diameter SPAD with low Dark Count Rate (120 cps at room temperature, 3% hot-pixels) and 55% peak Photon Detection Efficiency (PDE) at 450 nm. The TDC has a 6-bit counter and a 4-bit fine interpolator, based on a Delay Locked Loop (DLL) line, which makes the TDC insensitive to process, voltage, and temperature drifts. The implemented sliding-scale technique improves linearity, giving 2% LSB DNL and 10% LSB INL. The single-shot precision is 260 ps rms, comprising SPAD, TDC and driving board jitter. Both optical and electrical crosstalk among SPADs and TDCs are negligible. 2D fast movies and 3D reconstructions with centimeter resolution are reported.
机译:采用0.35μm汽车认证的CMOS技术制造了32×32单光子雪崩二极管(SPAD)和时间数字转换器(TDC)的阵列。芯片的整体尺寸为9×9 mm〜2。每个像素都能够以3.14%的填充因子检测300 nm-900 nm波长范围内的光子,并对它们进行计数或为它们的到达时间加上时间戳。在光子计数模式下,像素内6位计数器可提供100 kfps的光子数分辨强度电影,而在光子定时模式下,10位像素内TDC可提供时间分辨图(与时间相关的单一光子计数测量)或3D深度解析(通过直接飞行时间技术)图像和影片,分辨率为312 ps。光电探测器是直径为30μm的SPAD,具有低暗计数率(室温下为120 cps,热像素为3%),在450 nm处的峰值光子检测效率(PDE)为55%。 TDC具有6位计数器和4位精细内插器,基于延迟锁定环(DLL)线,这使得TDC对过程,电压和温度漂移不敏感。实施的滑标技术提高了线性度,提供了2%LSB DNL和10%LSB INL。单脉冲精度为260 ps rms,包括SPAD,TDC和驱动板抖动。 SPAD和TDC之间的光和电串扰都可以忽略不计。据报道,具有厘米分辨率的2D快速电影和3D重建。

著录项

  • 来源
    《Quantum sensing and nanophotonic devices XII 》|2015年|93701U.1-93701U.7|共7页
  • 会议地点 San Francisco CA(US)
  • 作者单位

    Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria Piazza Leonardo da Vinci 32, I-20133 Milano, Italy;

    Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria Piazza Leonardo da Vinci 32, I-20133 Milano, Italy;

    Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria Piazza Leonardo da Vinci 32, I-20133 Milano, Italy;

    Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy;

    Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy;

    Micro Photon Device S.r.l., Via Stradivari 4, 39100, Bolzano, Italy;

    Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria Piazza Leonardo da Vinci 32, I-20133 Milano, Italy;

    Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria Piazza Leonardo da Vinci 32, I-20133 Milano, Italy;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Single-photon avalanche diode (SPAD); photon counting; 2D Imaging; 3D Ranging; Time-of-Flight; Time-to-Digital Converter;

    机译:单光子雪崩二极管(SPAD);光子计数2D成像3D测距;飞行时间;时间数字转换器;

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