Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices

摘要

Metal-semiconductor-metal solar blind ultraviolet photodetectors have been fabricated using both BGaN-GaN and BGaN-AlN superlattices as active layers. A high internal gain (up to 3 × 104 for optical power in the nW range) is obtained with a highly reduced