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GROWTH OF IRON THIN FILMS BY AP-MOCVD STARTING FROM FERROCENE AND H_2O

机译:从二茂铁和H_2O开始的AP-MOCVD生长铁薄膜

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Fe thin layers were obtained by atmospheric pressure MOCVD process starting from the reactive gas mixture FeCp_2 and H_2O in the temperature range 973-1073 K. A thermochemical simulation of the Fe-C-H-O system allowed to approach the optimum processing conditions. XRD and microprobe analysis show that the highest iron content in the layer is obtained for H_2O/FeCp_2 ratios between 4 and 6. Film growth occurs in two steps: the initial formation of a black porous layer which is further densified as a result of the grains growth by increasing the deposition time in order to form grey and compact metallic films. This two steps mechanism is confirmed by kinetic and in situ IR pyrometric observations.
机译:通过大气压MOCVD工艺,从反应气体混合物FeCp_2和H_2O在973-1073 K的温度范围内获得了Fe薄层。Fe-C-H-O系统的热化学模拟可以接近最佳工艺条件。 XRD和微探针分析表明,当H_2O / FeCp_2的比在4和6之间时,层中铁含量最高。膜的生长分两个步骤进行:初始形成黑色多孔层,该黑色多孔层由于晶粒而进一步致密化通过增加沉积时间来生长,以形成灰色且致密的金属膜。这两个步骤的机理已通过动力学和原位红外高温测定证实。

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