TRANSFER OF TWO-INCH GAN FILM BY THE SMART CUT™ TECHNOLOGY

摘要

Multiple transfers of high quality GaN layers onto carrier substrates by the Smart Cut technology is an attractive technical solution for the industrialization of GaN material. Full wafer transfers of two-inch GaN films onto sapphire wafers have been successfully achieved using the Smart Cut technology. The starting GaN-on-sapphire pseudo-substrates were implanted with protons at 60 keV with dose in the 2 to 5x10~(17) cm~(-2) range. To carry out layer transfer, hydrophilic bonding was performed at room temperature between PECVD oxide layers deposited onto GaN pseudo-substrate and carrier sapphire wafer. The detachment along the implanted layer within the GaN was subsequently induced. The macroscopic view showed a good transfer on the full wafer, with few defects. Detailed characterizations were done by SEM, TEM, XRD and AFM analysis demonstrating the good quality of the transferred layers.